Byungsub Kim (S'06-M'10) was born in Busan, Korea. He received B.S. degree in the department of Electronic and Electrical Engineering at Pohang University of Science and Technology (POSTECH) in 2000, and M.S. and Ph.D. degrees in the department of Electrical Engineering and Computer Science at Massachusetts Institute of Technology (MIT) in 2004 and 2010, respectively.
In summers of 2006 and 2007, he was an intern at IBM T. J. Watson Research Center, Yorktown, Heights, NY, where he developed DFE-IIR architectures and circuits for a compact I/O for silicon carrier pacakage interconnect technology. In 2009, he also spent summer internshiop at Intel Corporation, Hillsboro, OR, USA where he is currently developing the next generation high-speed interconnect circuits. His research includes high-speed mixed-signal circuit design, computer-aided-design (CAD) methodology for circuits and systems, and future circuits and systems.
Dr. Kim received IEEE 2009 Journal of Solid-State Circuits Best Paper Award, Beatrice Winner Award for Editorial Excellence at IEEE 2009 Ineternational Solid-State Circuits Conference (ISSCC), 2009 Analog Device Inc. Outstanding Student Designer Award from MIT, and MIT EECS Jin-Au Kong Outstanding Doctoral Thesis Hornoable Mentions in 2011. His major contribution includes invention of DFE-IIR, charge-injection FFE, pre-distorted FFE, and development of fast joint-circuit-interconnect modeling and estimation methods.
In summers of 2006 and 2007, he was an intern at IBM T. J. Watson Research Center, Yorktown, Heights, NY, where he developed DFE-IIR architectures and circuits for a compact I/O for silicon carrier pacakage interconnect technology. In 2009, he also spent summer internshiop at Intel Corporation, Hillsboro, OR, USA where he is currently developing the next generation high-speed interconnect circuits. His research includes high-speed mixed-signal circuit design, computer-aided-design (CAD) methodology for circuits and systems, and future circuits and systems.
Dr. Kim received IEEE 2009 Journal of Solid-State Circuits Best Paper Award, Beatrice Winner Award for Editorial Excellence at IEEE 2009 Ineternational Solid-State Circuits Conference (ISSCC), 2009 Analog Device Inc. Outstanding Student Designer Award from MIT, and MIT EECS Jin-Au Kong Outstanding Doctoral Thesis Hornoable Mentions in 2011. His major contribution includes invention of DFE-IIR, charge-injection FFE, pre-distorted FFE, and development of fast joint-circuit-interconnect modeling and estimation methods.